A theory of band-population effects in electroreflectance is presented without invoking the usual Franz-Keldysh mechanism. The theory is based on the relative shift between the bands and the Fermi level when an external field is applied. Spatially varying relative Fermi level near the semiconductor surface and the effective-mass approximation to the bands are assumed when calculating the change in the dielectric function 〈 Δε 〉. Results are compared with experimentally observed structures in InSb and PbSe.
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Bottka et al. (1975) studied this question.
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