Formation and Properties of Anodic Oxide Films on Indium Antimonide

The surfaces of the high purity n-type InSb were anodized in a KOH solution under the constant current conditions, and the electrical characteristics of the resultant oxide films were measured at room temperature at liquid nitrogen temperature. A new etching technique for indium antimonide is presented which gives a flat mirror-like surface prior to anodization. At liquid nitrogen temperature, the resistivity of the film is evaluated to be more than 10 16 Ω-cm, and the breakdown voltage is 100 Volts/µm. The dielectric constant at 1 MHz is 11 for thin films, showing a little dependence on the thickness of the film. A transient behavior in the current-voltage characteristics of the film was observed at both temperatures.