Significance of Crystallographic Polarity in the Fabrication of Junctions in InSb

The effect of {111} polarity in the fabrication of alloyed p-n junctions in InSb was investigated. The fabrication procedure also considers other polarity dependent effects found in III–V compounds. the results of this investigation suggest use of the {1̄1̄1̄} surface over the {111} for obtaining planar, lower reverse current, higher and sharper breakdown junctions. The implication of this study, using the exemplary III–V compound InSb, is that in the use of III–V compounds for the fabrication of p-n junction devices, one must regard a concept, polarity, heretofore not embraced in the manufacture of devices made of Ge and Si.