In a previous paper, the displacive phase transition in narrow-gap semiconductors was investigated in terms of electron-phonon coupled Hamiltonian in the mean-field approximation. In this paper the effect of the lattice anharmonicity on the previous system is examined in the mean-field approximation. In SnTe, the lattice anharmonicity is considered to be the main origin of the temperature dependence of the soft mode frequency. The dependence of the critical temperature on the carrier concentration is calculated with a simple model.
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Akiko Natori (1976) studied this question.
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