We report on the experimental evidence for terahertz (THz) lasing of boron-doped strained Si1−xGex quantum-well structures. The lasing arises under strong electric fields (300–1500 V/cm) applied parallel to interfaces. The spectrum of THz stimulated emission is presented showing the lasing wavelength near 100 μm and the modal structure caused by a resonator. The mechanism of population inversion is based on the formation of resonant acceptor states in strained SiGe layer.
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Алтухов et al. (2001) studied this question.
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