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An amorphous to a polycrystal or a single-crystal transition by ruby-laser irradiation of amorphous Si, obtained through ion implantation, is discussed. Both free-generation and Q-switched laser mode operation are used. Under a free-generation operation only the amorphous to polycrystal transition is obtained, which is attributed to nonthermal effects. In the Q-switched mode both transitions are obtained. The single-crystal transition is interpreted as due mainly to the melting of the amorphous layer.
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Bertolotti et al. (1979) studied this question.
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