Two deep hole traps in boron-implanted phosphorus-doped silicon

Energy level and concentration profile measurements of two deep hole traps in boron-implanted, phosphorus-doped silicon are reported. The traps are present following annealing at temperatures near 400 °C. The energy levels and emission cross sections of the two traps are EV +(0.671±0.005) eV, (1.7±0.4)×10−15 cm2, and EV +(0.471±0.007) eV, (2.2±0.8)×10−16 cm2. The concentration profiles of both traps are highly peaked at about 0.31 μm from the silicon surface, in good agreement with nuclear energy loss profile calculations.