Argon implantation gettering was investigated to improve p-n junctions made by high-dose arsenic implantation through oxide film. Arsenic was implanted into p-type silicon through 520 Å oxide at 2×1015 to 1×1016 cm−2, 100–110 keV. When argon was implanted on the wafer back side at 1×1016 cm−2, 200 keV following arsenic implantation, all junctions showed hard breakdown. However, many junctions without argon implantation showed soft breakdown with large leakage current. Argon implantation reduced etch pits appearing in the arsenic-implanted region.
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Murase et al. (1977) studied this question.
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