Dislocation reactions in arsenic-implanted and annealed silicon

Arsenic implantation into Si and annealing at 800°C creates a high density of small interstitial dislocation loops. Further annealing in the range of 900°C to 1000°C causes coarser dislocation structures which depend on the initial implantation conditions. After implantation through thin SiO2 layers large winding dislocation loops of shear type are obtained. A detailed account is given of the transformation of small interstitial loops into large shear loops.