Ion implantation damage and annealing in GaP

40 keV Te ions were implanted in GaP at room temperature and measurements of the Ga and P disorder were made using the technique of Rutherford backscatteringof 1 MeV He+ ions. The evaluation of the backscattering spectra for disordered binary crystals is discussed and shows that within the limits of sensitivity of the measurements, the degrees of disorder of both atomic species were equal. Attempts to anneal highly disordered crystals by either a 1 MeV He+ probe beam or a 10 keV He+ beam met with no success, both leading to enhanced damage.