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InGaP has been grown on GaP substrates by low pressure metalorganic chemical vapor deposition (MOCVD) using triethylindium, triethylgallium and phosphine. A buffer layer with step-graded alloy composition is inserted between the GaP substrate and the InGaP layer with a constant composition to reduce the influence of lattice mismatch. A trial fabrication of In 0.34 Ga 0.66 P light-emitting diodes(LEDs) has indicated that the diode efficiency is about one order of magnitude lower than commercially available GaAsP yellow LEDs. Further improvement in the efficiency is also discussed.
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Iwamoto et al. (1987) studied this question.
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