Fabrication of n+/p InP solar cells on silicon substrates

InP solar cells were fabricated from films deposited by metalorganic chemical vapor deposition on Si substrates (using a GaAs buffer layer) and on GaAs substrates. Air mass zero efficiencies of 7.1% and 9.4%, respectively, were achieved. Prospects are good for improving the material quality of the InP films, but more work is needed to make the n+-p-p+ structure of the InP solar cells compatible with the silicon substrates, which cause n-type doping of the III-V films.