New profiled silicon photodetector for improved short-wavelength quantum efficiency

A new silicon-profiled ion-implanted n+-n−-p photodetector structure was developed for improved quantum efficiency in the visible spectrum. This device offers a significantly improved blue color response and it is compatible with CCD and MOSFET technologies. Experimental results show that the new device offers a quantum efficiency of more than 80% at 4000-Å wavelength relative to less than 1% quantum efficiency which a conventional n+-p silicon photodiode offers at the same wavelength. In addition, the present new device offers a flat quantum efficiency of more than 80% in the ultraviolet and entire visible spectrum (3800?λ?8000 Å). Also, the present device can be used as an efficient silicon solar cell.