Infrared interferometry is used to determine the thickness of polycrystalline silicon (polysilicon) deposited on oxidized silicon by the thermal decomposition of silane. The thickness is obtained by comparing the measured wavelength positions of the reflectivity extremes with those predicted theoretically and plotted against polysilicon thickness for a given underlying thickness. The infrared optical properties of polysilicon are found to be essentially the same as those of single‐crystal silicon.
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C. J. Dell'Oca (1972) studied this question.