Charge-coupled device with buried channels under electrode gaps

A new kind of charge-coupled device with buried channels is described. This device is fabricated by forming ion-implanted buried channels under the gaps between electrodes. Since the device does not depend on the surface potential under the gaps, a reliable and low-operating-voltage device with nonoverlapping gate electrodes can be made. Transfer efficiency greater than 99.5% per transfer has been obtained at 500 kHz.