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Liquid phase epitaxy (LPE) has been used to grow layers of , in the range , on the Ga (111) surface of . After an n‐layer is grown, p‐n junctions are made either by Zn diffusion or by LPE growth of a p‐layer from a Zn‐doped liquid. The rate of deposition and the dependence of layer composition on charge composition are found to be consistent with liquidus and solidus isotherms for the In‐Ga‐P system obtained by a first‐order calculation.
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B.W. Hakki (1971) studied this question.
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