A Reproducible LPE Growth of High-Quality In1-xGaxP1-yAsy Layers on GaAs by the Control of Phosphorus Vapor on the Substrate

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Lattice-matched LPE growth of In 1- x Ga x P 1- y As y layers on GaAs was carried out using a conventional slider boat system. High-quality epitaxial layers with smooth mirror surfaces were reproducibly obtained by the control of the diffusion of P vapor from the melt to the substrate and the reaction with the substrate at high temperatures before the growth. A very thin surface layer on the substrate which is formed by the reaction with P vapor seems to improve the affinity between the melt and the substrate as well as to relax internal stresses of the epitaxial layer caused by the lattice mismatch.