Observation of trap-assisted space charge limited conductivity in short channel MoS2 transistor

We present temperature dependent I–V measurements of short channel MoS2 field effect devices at high source-drain bias. We find that, although the I–V characteristics are ohmic at low bias, the conduction becomes space charge limited at high VDS, and existence of an exponential distribution of trap states was observed. The temperature independent critical drain-source voltage (Vc) was also determined. The density of trap states was quantitatively calculated from Vc. The possible origin of exponential trap distribution in these devices is also discussed.