The anti-Stokes Raman scattering of a-Si and a-Si:H is studied at T=2 K for intense ({~}1 mJ/mm²) pulsed optical excitation. It is found that high-energy phonons ({}{ω}>100 cm^-1) emitted as a result of carrier relaxation possess a nonequilibrium energy distribution. A time-resolved study of the Raman signals reveals relaxation time constants for 480-cm^-1 phonons as long as 10 ns. The effect of phonon localization is suggested as an explanation of the experimental results.
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Scholten et al. (1993) studied this question.
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