Quasi‐tem spectral domain technique for multiconductor structures with rectangular and trapezoidal conductor cross sections

An efficient technique based on the quasi‐TEM spectral domain analysis is formulated to compute the characteristic parameters of multiconductor‐multilayered structures with finite thickness conductors having trapezoidal and rectangular cross sections. Computed results for typical single and coupled lines on alumina and GaAs substrates are presented and compared with results based on finite and boundary element techniques and measured data for the effective dielectric constant.