Fundamental lateral mode oscillation via gain tailoring in broad area semiconductor lasers

We show that by employing gain tailoring in a broad area semiconductor laser we achieve fundamental lateral mode operation with a diffraction-limited single-lobed far-field pattern. We demonstrate a tailored gain broad area laser 60 μm wide which emits 450 mW per mirror into a stable, single-lobed far-field pattern 3 1/2° wide at 5.3 Ith.