Submicron x-ray lithography using laser-produced plasma as a source

X-ray lithography was studied, using laser-produced plasma as a source. A single target shot of a frequency-tripled Nd:glass laser (λ=0.35 μm, 35 J in 1 ns) was found to be sufficient for submicron x-ray lithography in poly(butene-1-sulfone) (PBS) or poly(glycidyl-methacrylate-ethyl acrylate) (COP) resists. The incident x-ray flux is about an order of a magnitude smaller than that normally required. This behavior could be the result of the transient character of the exposure and an abrupt rise in the resist temperature.