Self-aligned GaAs/GaAIAs semiconductor laser with lateral spatial variation in thickness grown by metalorganic-chemical vapor deposition

A self-aligned masking technique for growing diode lasers with lateral spatial variations in the active and/or cladding regions by metalorganic-chemical vapor deposition is described. These lasers inherently have both lateral current confinement and lateral real refractive index waveguidance. Threshold currents of 40 mA and differential quantum efficiencies of 30% are measured reproducibly over a wafer.