We study how electrons, initially in thermal equilibrium, drift under the action of an applied electric field within bulk wurtzite indium nitride. We find that the optimal cutoff frequency for an ideal indium-nitride-based device ranges from around 10GHz when the device thickness is set to 10μm to about 2.5THz when the device thickness is set to 0.1μm. We thus suggest that indium nitride offers great promise for future high-speed device applications.
No takes yet. Share an insight, caveat, or question.
O’Leary et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: