Answers are grounded in this paper and cite their sources.
A technique is introduced for matching monolithic power amplifiers by using short thin-film microstrip transformers with very low characteristic impedance. An X-band power FET amplifier has been successfully realized with this technique, using a standard GaAs foundry, two-level metal process. The amplifier has achieved over 5.5-dB small-signal gain and an output power of 1 W at a center frequency of 11.3 GHz. This matching technique can greatly reduce the area of the matching networks compared with conventional microstrip techniques which rely on cluster matching and power dividing/combining.>
No takes yet. Share an insight, caveat, or question.
Gillick et al. (1992) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: