C-V-profiling has been performed for p-p heterostructures based on new narrow-gap compaund semiconductor ZnCdHgTe. The effective dielectric constant of the whole heterostructure and corrected carriers profile have been calculated as function of the transition region width for various compositions localized near the heterointerface. A good agreement between experimental and numerical simulation of C-V characteristics was demonstrated. Recent patents on thin film technologies are also discussed in this paper.
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Andrukhiv et al. (2009) studied this question.
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