Equivalent circuit models in semiconductor transport for thermal, optical, auger-impact, and tunnelling recombination–generation–trapping processes

The circuit models for analysing electrical transport phenomena in solids are developed for nine inelastic nontunnelling and twelve elastic and inelastic tunnelling recombination–generation–trapping processes in terms of the conventional circuit parameters. These include the three inelastic nontunnelling energy conservation mechanisms: thermal, optical, and Augerimpact, and the tunnelling mechanisms which may be elastic or inelastic. These are grouped into three possible combinations of initial and final states of electrons and holes, giving the band–band, band–bound, and bound–bound transitions. Both the large-signal, the dc steady-state, and the small-signal models are obtained. Hot carrier effects are included which give rise to additional dependent current sources in both the conduction and recombination–generation current branches in the small-signal models. Noise sources are also included in the small-signal model. The circuit model synthesis procedure for complex recombination–generation–trapping processes under arbitrary steady-state conditions is simplified by grouping the electron capture and emission terms and by grouping those of holes.