Two redox-active poly(oxoammonium salt)s were synthesized via chemical oxidation of a TEMPO-substituted polymer, or conventional radical polymerization of the oxoammonium monomer, respectively. The diode-structured thin film device composed of poly(oxoammonium salt) with radical conc. of 6–43% exhibited a resistive switching behavior (ON–OFF ratio >103), in contrast to the radical-free poly(oxoammonium salt), which revealed that the coexistence of radical/oxoammonium salts contributed to a significant change in I–V characteristics.
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Suga et al. (2009) studied this question.
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