p-Type CuₓO Films Deposited at Room Temperature for Thin-Film Transistors

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Thin-films of copper oxide (CuxO) were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure (OPP). A metallic Cu film with cubic structure obtained from 0% OPPhas been transformed to cubic Cu2O phase for the increase in OPPto 9% but then changed to monoclinic CuO phase (for OPP≥ 25%). The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The CuxO films produced with OPPranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors.