The photoluminescence properties of porous Si have been systematically investigated by detailed measurements of the excitation and emission spectra. The strong visible light emission is explained by a model in which the radiative recombination of electron-hole pairs created in the silicon nanostructure occurs through the luminescence centers with strong phonon coupling. A wide band gap energy of the porous Si layer compared to that of bulk Si can explain the excitation spectra of the luminescence.
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Murayama et al. (1992) studied this question.
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