Charge Detection in an Array of CMOS Quantum Dots

This is the authors' abstract. We don't add key points for this paper.

Silicon MOS devices provide a promising platform to create a large ensemble of interacting qubits and bring quantum devices to a large scale, but the realization of basic operations such as charge detection is still challenging. The authors demonstrate a silicon MOS device with an array of silicon quantum dots capacitively and tunnel coupled. The charge occupancy of all the quantum dots in the structure is probed using detectors embedded within the array, and the Coulomb disorder is quantified. This study constitutes a significant step towards the control of large arrays of semiconductor qubits.