In this work, a dynamic analysis of the V line is presented. Previous work analyzed the performance of this structure for low frequency applications using quasistatic approximations. Here, we extend the analysis of the V line into the higher frequency range where dispersion becomes significant and where it cannot be predicted by quasistatic methods. We show that the V line provides features and advantages that are not present in the conventional microstrip structures, most notably the appreciable decrease in coupling between adjacent lines in comparison with the conventional microstrip structure. This feature makes the V line well suited for high packaging density applications. The full-wave analysis is carried out using a Yee-cell based finite-difference time-domain (FDTD) method, while enforcing a highly efficient and stable mesh truncation technique. Results are presented for a single and multiconductor structures.
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Ramahi et al. (1998) studied this question.
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