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We study on the sub-picosecond mid-infrared pump-probe reflection spectroscopy on photo-doped Si and GaAs. We discover experimentally that spectral profile of metallic reflection near the plasma resonance brings us the information on both of carrier density and spatial inhomogeneity. The red-shift of the plasma resonance indicates the reduction of carrier density near the surface, while the broadening of plasma resonance is caused by the steep spatial gradient of carrier density rather than carrier damping. The spectral profile of reflection in Si shows that the carrier diffusion dominates the spatial-temporal evolution of the photo-doped carriers.
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Nagai et al. (2002) studied this question.
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