We have developed a sensitive ultrafast technique for measuring the mobility of photocarriers in semiconductors. High-resistivity samples are photoexcited with a femtosecond laser, and carrier mobilities are determined by polarization-sensitive terahertz emission measurements in a magnetic field. Measurements on a semi-insulating GaAs sample at T=280K yielded μe=4400±600cm2∕Vs and μh=850±400cm2∕Vs within 0.5ps of excitation with λ=800nm radiation. In GaAs, this zero-background technique requires ∼10pJ∕pulse photoexcitation and can be easily implemented with an unamplified Ti:S laser oscillator.
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Heyman et al. (2006) studied this question.
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