Raman scattering measurement of the free-carrier concentration and of the impurity location in boron-implanted silicon

Using Raman scattering we have measured the number of free carriers and the fraction of boron ions in substitutional positions, in boron-implanted silicon, as a function of the annealing temperature. After implantation, silicon is n type and becomes p type above 600 °C. The doping is governed at low temperatures by the annealing of defects and above 600 °C by the migration of boron ions into substitutional positions.