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Recent progresses in magnetic tunnel junctions with perpendicular magnetic anisotropy (PMA) are reviewed and summarized. At first, the concept and source of perpendicular magnetic anisotropy (PMA) are introduced. Next, a historical overview of PMA materials as magnetic electrodes, such as the RE—TM alloys TbFeCo and GdFeCo, novel tetragonal manganese alloys Mn—Ga, L1 0 -ordered (Co, Fe)/Pt alloy, multilayer film [Co, Fe, CoFe/Pt, Pd, Ni, Au] N , and ultra-thin magnetic metal/oxidized barrier is offered. The other part of the article focuses on the optimization and fabrication of CoFeB/MgO/CoFeB p-MTJs, which is thought to have high potential to meet the main demands for non-volatile magnetic random access memory.
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Liu et al. (2014) studied this question.
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