This letter proposes and demonstrates the operation of a new heterojunction InGaAsP/InP laser, a double-carrier-confinement heterojunction (DCC-heterojunction) laser. This laser is fabricated by incorporating a p-InGaAsP second well layer into a p-InP clad layer of the conventional InGaAsP/InP double-heterojunction laser. With this laser, excellent temperature stability of threshold current [T0 is 180 K in the temperature range of 20–100 °C when threshold current varies with exp(T/T0)] and high external differential quantum efficiency (more than 45% at 100 °C) were achieved. Beam divergence perpendicular to the junction plane was also much improved (less than 25°).
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Yano et al. (1982) studied this question.
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