Simultaneous achievement of superior response and full recovery of titanium dioxide/graphene hybrid FET sensors for NH ₃ through p- to n-mode switch

are well elucidated using energy band diagrams based on the experimental results. This study proposes a novel idea for performance improvement of FET based sensors with p- and n-type hybrid sensing materials through p (n)- to n (p)-mode switch assisted by gate biasing by incorporating suitable electron (hole) rich materials to compensate holes (electrons) in p (n)-type materials for electron donor (acceptor) gas detection.