We report the electrical bistability and negative differential resistance (NDR) in single Sb-doped ZnO nanobelts/SiOx/p-type Si heterostructured devices. The current-voltage (I-V) characteristics of the devices were discussed in terms of the energy band diagram of the devices. The origin of the electrical bistability and NDR is suggested to be associated with the electric-field-induced charge transfer. The performance of the fabricated devices can be enhanced under the ultraviolet light illumination.
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Yang et al. (2010) studied this question.
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