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Room temperature photoluminescence is reported from GaInAsSbP pentanary alloys grown by liquid phase epitaxy on GaSb. The epitaxial layers exhibited emission in the midinfrared between 3 and 4μm. Investigation of the structural and photoluminescence properties revealed localization effects associated with potential fluctuations in the pentanary alloy arising from compositional modulation.
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Krier et al. (2007) studied this question.
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