Characteristics of 1.3μm quantum-dot lasers with high-density and high-uniformity quantum dots

The authors realized a five-layered 1.3μm InAs quantum dot (QD) with a high density and uniformity of 8.0×1010cm−2/sheet and 23meV, respectively, by employing an As2 source and a gradient-composition strain reducing layer. Further, the authors demonstrated the 1.3μm wavelength emission of this five-layered QD laser with a 0.5mm cavity length and cleaved facet at room temperature. Moreover, the authors could achieve a high modal gain of 43cm−1 at 1.3μm because of the high density and uniformity of the QDs.