Growth of the optical conductivity in the Cu-O planes

We have studied the development of the optical conductivity as electrons are added to the Cu-O planes in Pr_2-x{Ce}ₓCuO_4-δ by varying x(0{≤}x{≤}0.2). In the metallic phases, contributions to the optical conductivity below 3 eV arise from three sources: mobile carriers, mid-infrared excitations, and charge-transfer excitations. The mobile carrier spectral weight grows roughly linearly with x, while the mid-infrared band appears to evolve at low doping via a transfer of spectral weight from the charge-transfer band. Comparing these results with hole doping in La_2-x{Sr}ₓCuO_4-δ indicates an electron-hole symmetry that is not anticipated by standard charge-transfer insulator models.