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High-frequency (MHz) and low-frequency (kHz) current oscillations are found in photoexcited long GaAs diodes; the threshold field for the former is about 4.0 × 103 V/cm, and for the latter is about 1.5 × 103 V/cm. At an average applied field >4 × 103 V/cm, high-frequency oscillation occurs first and continues for a while, then low-frequency oscillation takes place. Experimental results suggest that the origin of high- and low-frequency oscillation are different from each other; the former is the two-valley transfer effect, and the latter the field-dependent trapping effect.
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Yozo Tokumaru (1969) studied this question.
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