Effect of Oxide Layers on the Diffusion of Phosphorus into Silicon

The diffusion of phosphorus from the vapor phase into single crystal silicon has been studied. The experimental data are analyzed in terms of a two-layer diffusion model, leading to the determination of a diffusion constant for phosphorus in the oxide. The resulting diffusion constant at 1150°C is found to be 2.1×10−15 cm/sec2 with an activation energy of 1.4 ev.