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April 1, 1994IEEE Electron Device Letters

The impact of scaling-down oxide thickness on poly-Si thin-film transistors' I-V characteristics

Pole-Shang Lin To-Sing Li

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Abstract

The key factors reducing the fluctuations of poly-Si I-V fluctuations are investigated. Besides the trapping states at the grain boundary, the oxide thickness plays an important role in poly-Si characteristics. Scaling down the oxide thickness will improve both poly-Si performance and I-V uniformity.>

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Cite This Study

Lin et al. (1994) studied this question.

synapsesocial.com/papers/6a85d65a88354d436ebbc9ea https://doi.org/10.1109/55.285404

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