Near-field microwave microscope measurements to characterize bulk material properties

The authors discuss near-field scanning microwave microscope measurements of the complex permittivity for bulk dielectric (fused silica), semiconductor (silicon), and metal (copper). The authors use these measurements to test existing quasistatic theoretical approach to deembed the bulk material properties from the measured data. The known quasistatic models fit the measured data well with parameters for silicon (εs=11.9, σSi=50S∕m) and fused silica (εs=3.85, tanδ=1.0×10−4). However, for copper (with σCu=5.67×107S∕m), apart from quasistatic coupling, an additional loss of 12Ω is needed to fit the data.