The voltage drop of vacuum and boron (B)-doped diamond electron emitter bulk has been discussed in order to understand the electron emission mechanism of B-doped diamond. It is confirmed that the electron emission from B-doped diamond depends on its film thickness and the localized electron pass/channel is formed in the film. From the results of the threshold voltage versus anode-diamond spacing characteristics, it is found that most of the anode voltage is applied in vacuum, and the high electric field near the B-doped diamond surface is required for the electron emission from B-doped diamond regardless of the film thickness.
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Yamada et al. (2000) studied this question.
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