We investigated high-temperature dielectric responses of high-κ perovskite nanosheet (Ca2Nb3O10), an important material platform for postgraphene technology and ultrascale electronic devices. Through in situ characterizations using conducting atomic force microscopy, we found a robust high-temperature property of Ca2Nb3O10 nanosheet even in a monolayer form (∼2 nm). Furthermore, layer-by-layer assembled nanocapacitors retained both size-free high-εr characteristic (∼200) and high insulation resistance (∼1×10(-7) A/cm2) at high temperatures up to 250 °C. The simultaneous improvement of εr and thermal stability in high-κ nanodielectrics is of critical technological importance, and perovskite nanosheet has great potential for a rational design and construction of high-temperature capacitors.
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Kim et al. (2014) studied this question.
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