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Various amorphous SiO x nanotube structures nucleated by GeO x nanoparticles were synthesized by thermal evaporation method. The presence of Ge does not only nucleate the growth of the SiO x nanomaterials, but also dopes them. The nanostructure morphology is affected by the substrate temperature, source temperature and GeO x vapor density through their effect on the size and lifetime of the nucleation center. In general, low substrate temperature promotes the formation of the nanotube bundle structure with 2–3% atomic ratio of Ge doping, and high temperature produces Ge-free much less bundled nanotubes.
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Lao et al. (2002) studied this question.
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