Combining the use of a UV storage ring free electron laser and of synchrotron radiation, a time resolved core level spectroscopy study has been performed on photoexcited Si(111)2×1 surfaces with subnanosecond resolution. This enabled us to measure band bending fluctuations, caused by surface carrier dynamics, during the first nanosecond after photoexcitation; differences in the Si2p core level lineshape, dependent on the pump-probe time delay, were also observed. The presence of defects was found to reduce the fluctuations and make the carrier recombination process faster.
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Marsi et al. (1997) studied this question.
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